Generation of Oxygen-Related Defects in Crystal Silicon Processed by the RPD

Suppression of the formation crystal defects is essential for realization high-efficiency solar cells. The reactive plasma deposition (RPD) process introduces in silicon bulk and at passivation layer/silicon interface. This study suggests that oxygen impurities can affect generation RPD-induced defects. Although RPD conditions were same, number recombination centers Cz-Si was larger than Fz wafer. increase 950 °C pre-annealing resulted increased peak intensity corresponding to defect level E1 MOS sample. In case Fz-Si, with increasing time slight. indicates precipitation might be related structure